A quality evaluation method of a silicon single crystal

Title:

A quality evaluation method of a silicon single crystal

Document Type and Number:

Japanese Patent JP6025070

Kind Code:

B2

More Like This:

JP2001201441	APPARATUS AND METHOD FOR FABRICATING QUANTITATIVE CONTAMINATION SAMPLE
WO/2022/240573	IMAGE-BASED IN-SITU PROCESS MONITORING

Inventors:

Norio Otaka
Yoshinori Yagasaki
Toshio Yoshida
Takao Otokawa

Application Number:

JP2014029860A

Publication Date:

November 16, 2016

Filing Date:

February 19, 2014

Export Citation:

Assignee:

Shin-Etsu Semiconductor Co., Ltd.

International Classes:

H01L21/66; H01L21/324

Domestic Patent References:

Attorney, Agent or Firm:

Ryuji Harikawa

Previous Patent: A touch screen panel and a manufacturing method for the same

Next Patent: HEAD LOADING AND UNLOADING MECHANISM