Title:
ショットキー・ダイオード
Document Type and Number:
Japanese Patent JP7440086
Kind Code:
B2
Abstract:
A Schottky diode comprises: a first electrode; a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface, wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.
Inventors:
alharil feras
price richard
Cobb Brian
price richard
Cobb Brian
Application Number:
JP2020550925A
Publication Date:
February 28, 2024
Filing Date:
December 11, 2018
Export Citation:
Assignee:
PRAGMATIC SEMICONDUCTOR LIMITED
International Classes:
H01L29/872; H01L21/329; H01L21/8234; H01L27/06; H01L27/088; H01L29/47; H01L29/861; H01L29/868
Domestic Patent References:
| JP2007134684A | ||||
| JP2006165532A | ||||
| JP2005531127A |
Foreign References:
| US20080105870 |
Attorney, Agent or Firm:
Yasuo Hirai
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