Title:
A selection method of a polycrystalline silicon stick, and a manufacturing method of FZ single crystal silicon
Document Type and Number:
Japanese Patent JP5984741
Kind Code:
B2
Abstract:
When using a X-ray diffraction process to evaluate a localized orientation domain in polycrystalline silicon, a collected plate-shaped sample (20) is arranged at a location at which Bragg reflection is detected from a Miller index plane ; a disk-shaped sample (20) is caused to undergo in-plane rotation by a rotation angle φ about a rotation center at the center of the disk-shaped sample (20), in such a way that an X-ray irradiation area defined by a slit is scanned over a principal face thereof; peak top and baseline diffraction intensity are calculated from a chart indicating the disk-shaped sample (20) rotation angle φ-dependence of Bragg reflection intensity from the Miller index plane ; and a value obtained by dividing the peak top value by the baseline value is used as an evaluation index for a localized orientation domain.
Inventors:
Shuichi Miyao
Shigeyoshi Narazu
Shigeyoshi Narazu
Application Number:
JP2013111864A
Publication Date:
September 06, 2016
Filing Date:
May 28, 2013
Export Citation:
Assignee:
Shin-Etsu Chemical Co., Ltd.
International Classes:
G01N23/207; C01B33/02; G01N23/20
Domestic Patent References:
| JP2008039437A | ||||
| JP2013023425A | ||||
| JP2009091171A |
Foreign References:
| WO2012164803A1 | ||||
| WO2010098319A1 | ||||
| US20100272922 |
Attorney, Agent or Firm:
Seiji Ohno
Koji Morita
Kenichi Katayama
Koji Morita
Kenichi Katayama
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