Title:
A semiconductor device for electric power
Document Type and Number:
Japanese Patent JP6257478
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a power semiconductor device capable of simultaneously achieving miniaturization and high vibration resistance.SOLUTION: A power semiconductor device comprises: a heat radiation member 13; a ceramic substrate 3; a power semiconductor element 5; and an electrode 7 for a main circuit taken out in an upper surface direction of the power semiconductor element. A frame member 11 is fixed onto a conductor layer of the ceramic substrate, and a convex part 14 for deciding a position of the electrode is provided on the frame member, and a recessed part 24 engaged with the convex part is provided on the electrode.SELECTED DRAWING: Figure 1A
Inventors:
Noriyuki Besshiba
Yasushi Nakajima
Takakazu Ishii
Takao Mitsui
Yu Fuku
Yasushi Nakajima
Takakazu Ishii
Takao Mitsui
Yu Fuku
Application Number:
JP2014178101A
Publication Date:
January 10, 2018
Filing Date:
September 02, 2014
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L25/07; H01L23/473; H01L25/18
Domestic Patent References:
| JP2010177574A | ||||
| JP2005136133A | ||||
| JP2011108817A | ||||
| JP2014103182A | ||||
| JP2013219267A | ||||
| JP2012227455A | ||||
| JP2012084621A | ||||
| JP2014112585A | ||||
| JP2008218814A | ||||
| JP2009218814A |
Attorney, Agent or Firm:
Takuji Yamada
Mitsuo Tanaka
Mikio Takeuchi
Mitsuo Tanaka
Mikio Takeuchi