Title:
A semiconductor device using a penetration electrode substrate and a penetration electrode substrate
Document Type and Number:
Japanese Patent JP6044697
Kind Code:
B2
Inventors:
Satoru Kuramochi
Shino Koiwa
Yoshioka Hidenori
Shino Koiwa
Yoshioka Hidenori
Application Number:
JP2015227286A
Publication Date:
December 14, 2016
Filing Date:
November 20, 2015
Export Citation:
Assignee:
Dai Nippon Printing Co.,Ltd.
International Classes:
H01L23/32; H05K1/11
Domestic Patent References:
| JP4154187A | ||||
| JP2010171377A | ||||
| JP2002305360A | ||||
| JP2010532562A |
Attorney, Agent or Firm:
Takahashi Hayashi & Partners