Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023169187
Kind Code:
A
Abstract:
To provide a transistor which includes an oxide semiconductor, and in which a variation in electrical characteristics is suppressed and reliability is improved.SOLUTION: Provided is a semiconductor device including a transistor 100A. The transistor includes a first gate electrode 106, a first insulating film 104 over the first gate electrode, an oxide semiconductor film 108 over the first insulating film, a second insulating film 110 over the oxide semiconductor film, a second gate electrode 112 over the second insulating film, and a third insulating film 116 over the oxide semiconductor film and the second gate electrode. The oxide semiconductor film includes a channel region 108i overlapping with the second gate electrode, a source region 108s in contact with the third insulating film, and a drain region 108d in contact with the third insulating film. The first gate electrode and the second gate electrode are electrically connected to each other at an opening 143. When a field-effect mobility in a saturation region of the transistor is measured, a difference between a minimum value and a maximum value of the field-effect mobility is less than or equal to 15 cm2/Vs.SELECTED DRAWING: Figure 4
Inventors:
YAMAZAKI SHUNPEI
OKAZAKI KENICHI
TSUBUKI MASASHI
BABA HARUYUKI
SHIGENOBU YUKIE
HIZUKA EMI
OKAZAKI KENICHI
TSUBUKI MASASHI
BABA HARUYUKI
SHIGENOBU YUKIE
HIZUKA EMI
Application Number:
JP2023138788A
Publication Date:
November 29, 2023
Filing Date:
August 29, 2023
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/8234; H01L27/088; H01L29/786; H10B12/00
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