Title:
半導体装置
Document Type and Number:
Japanese Patent JP7220752
Kind Code:
B2
Abstract:
Reduction in power consumption of a semiconductor device is achieved. The semiconductor device includes: a first circuit operating at a first power supply voltage and a second circuit operating at a second power supply voltage and including a level shift unit and a switch unit, the first circuit is configured of a low-breakdown-voltage n-type transistor that is an SOTB transistor, and the switch unit is configured of an n-type transistor that is an SOTB transistor. A second power supply voltage is higher than a first power supply voltage, and an impurity concentration of a channel formation region of the n-type transistor is higher than an impurity concentration of a channel formation region of the low-breakdown-voltage n-type transistor.
Inventors:
Kazuya Ueshima
Kazuhiro Kandatsu
Kazuhiro Kandatsu
Application Number:
JP2021123404A
Publication Date:
February 10, 2023
Filing Date:
July 28, 2021
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/8238; H01L21/336; H01L27/092; H01L29/786
Domestic Patent References:
| JP2002064150A | ||||
| JP8228145A | ||||
| JP2007201236A | ||||
| JP2008135580A | ||||
| JP2013164886A |
Foreign References:
| US20040071026 |
Attorney, Agent or Firm:
Patent Attorney Tsutsui International Patent Office