Title:
SEMICONDUCTOR LASER ELEMENT
Document Type and Number:
Japanese Patent JP2023157877
Kind Code:
A
Abstract:
To provide a semiconductor laser element capable of achieving laser oscillation with high luminance and high output single mode.SOLUTION: A semiconductor laser element includes a first ring resonator. The first ring resonator comprises a first semiconductor stack including a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer located between the first n-side semiconductor layer and the first p-side semiconductor layer. The first ring resonator also includes a diffraction grating. The semiconductor laser element further includes a second ring resonator optically coupled to the first ring resonator by evanescent field coupling. The second ring resonator comprises a second semiconductor stack including a second n-side semiconductor layer, a second p-side semiconductor layer, and a second active layer located between the second n-side semiconductor layer and the second p-side semiconductor layer. A peak wavelength of light emitted by the second ring resonator is the same as a peak wavelength of light emitted by the first ring resonator.SELECTED DRAWING: Figure 2A
Inventors:
MORDECHAI SEGEV
GAL HARARI
TOHI SHINJI
OMAE KUNIMICHI
ITO TAKUMI
GAL HARARI
TOHI SHINJI
OMAE KUNIMICHI
ITO TAKUMI
Application Number:
JP2023065427A
Publication Date:
October 26, 2023
Filing Date:
April 13, 2023
Export Citation:
Assignee:
TECHNION RES & DEV FOUNDATION
NICHIA KAGAKU KOGYO KK
NICHIA KAGAKU KOGYO KK
International Classes:
H01S5/12; H01S5/22
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Osamu Miyazaki
Tadahiko Ito
Osamu Miyazaki