Title:
スイッチング素子
Document Type and Number:
Japanese Patent JP7161582
Kind Code:
B2
Abstract:
To provide a switching element for a switching power source circuit that can switch higher voltage at higher speed.SOLUTION: A DC/DC converter includes a switching element formed of a MISFET in which an active region is formed of a SiC semiconductor. A driving circuit drives the switching element. A MOSFET chip 20 includes a trench gate structure including a trench 35 formed in the active region (SiC epitaxial layer 40), an insulating film 46 covering a bottom surface and a wall surface of the trench, an embedded gate 50 embedded in the trench through the insulating film, an on-gate insulating film 51 covering the embedded gate, and an electrode 24 covering the on-gate insulating film. The MISFET has a gate resistance of less than 30 Ω.SELECTED DRAWING: Figure 4
Inventors:
Hirotaka Otake
Application Number:
JP2021103868A
Publication Date:
October 26, 2022
Filing Date:
June 23, 2021
Export Citation:
Assignee:
ROHM Co., Ltd.
International Classes:
H01L29/78; H01L25/07; H01L25/18; H01L29/12; H02M3/155; H02M3/28
Domestic Patent References:
| JP2010259278A | ||||
| JP2011134984A | ||||
| JP2004055812A | ||||
| JP2005175425A | ||||
| JP2000312003A | ||||
| JP2009111320A | ||||
| JP3162018U | ||||
| JP2008177588A | ||||
| JP2001111048A | ||||
| JP11111983A |
Attorney, Agent or Firm:
Patent Business Corporation Ai Patent Office
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