Title:
A temperature sensor, a temperature measuring method, an electrooptics device
Document Type and Number:
Japanese Patent JP5953464
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a temperature sensor having high reliability in measurement.SOLUTION: A measurement cell for measuring temperature includes a thin film transistor and a capacitive element. In the thin film transistor, an LDD (lightly doped drain) region is formed between a channel forming region and a drain region, and the concentration of a first conductive impurity in the LDD region is lower than the concentration of the first conductive impurity in the drain region. The capacitive element is connected to the drain region of the thin film transistor. As the gate voltage dependency of an off-state current of the thin film transistor is extremely weak, a measurement value does not deviate from a correct value even when a threshold voltage of the thin film transistor varies in some degree, and thereby, reliability of the measurement result can be significantly improved. As the temperature dependency of the off-state current is enhanced, resolution in the measured temperature can be improved.
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Inventors:
Hiroshima
Mitsutoshi Miyasaka
Mutsumi Kimura
Akihiro Nakajima
Jun Taya
Mitsutoshi Miyasaka
Mutsumi Kimura
Akihiro Nakajima
Jun Taya
Application Number:
JP2012029174A
Publication Date:
July 20, 2016
Filing Date:
February 14, 2012
Export Citation:
Assignee:
Seiko Epson Corporation
Ryukoku University
Ryukoku University
International Classes:
G01K7/01; G02F1/133; G09F9/00; G09F9/30; H01L21/336; H01L29/786
Domestic Patent References:
| JP2011095087A | ||||
| JP2006071564A | ||||
| JP7226515A | ||||
| JP2000009547A |
Attorney, Agent or Firm:
Akira Obayashi
Seiichi Takada
Taro Takahashi
Masahiko Ueyanagi
Osamu Suzawa
Seiichi Takada
Taro Takahashi
Masahiko Ueyanagi
Osamu Suzawa