Title:
A transparent compound semiconductor and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6017016
Kind Code:
B2
Abstract:
The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba 1-X La X SnO 3 (0
Inventors:
Cha Kuklin
Lim Ji Sung
Lim Ji Sung
Application Number:
JP2015504502A
Publication Date:
October 26, 2016
Filing Date:
April 05, 2013
Export Citation:
Assignee:
RFTRON CO.,LTD.
International Classes:
H01L29/24; C23C14/08; C23C16/40; C30B29/22; H01L21/20; H01L21/363; H01L21/365
Other References:
H.F.WANG,ET.AL.,Transparent and conductive oxide with the perovskite structure:La- and Sb-doped BaSnO3,JOURNAL OF APPLIED PHYSICS,米国,American Institute of Physics,2007年,101,106105-1
Attorney, Agent or Firm:
Eio Furuya
Tadashi Matsushita
Tadashi Matsushita