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Patent Searching and Data


Title:
ATOMIC LAYER GROWTH DEVICE AND ATOMIC LAYER GROWTH METHOD
Document Type and Number:
WIPO Patent Application WO/2018/042755
Kind Code:
A1
Abstract:
An atomic layer growth device is provided with: a film formation container 11 in which a film formation treatment is performed; a stage 14 for retaining a substrate 100, the stage being provided in the film formation container 11 and being capable of moving up and down; a stage stopper 17 for stopping ascent of the stage 14 and for coming in contact with the stage 14 and thereby partitioning a film formation space S in which the film formation treatment is performed and a conveyance space in which conveyance of the substrate 100 is performed; a peripheral-edge stage adhesion preventive material 15 for covering a peripheral edge of the stage 14; and a stage stopper adhesion preventive material 24 provided on the stage stopper 17.

Inventors:
WASHIO KEISUKE (JP)
MATSUMOTO TATSUYA (JP)
Application Number:
PCT/JP2017/016188
Publication Date:
March 08, 2018
Filing Date:
April 24, 2017
Export Citation:
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Assignee:
JAPAN STEEL WORKS LTD (JP)
International Classes:
C23C16/44; H01L21/31; H01L21/316; H01L51/50; H05B33/04; H05B33/10
Domestic Patent References:
WO2015112470A12015-07-30
WO2016190005A12016-12-01
Foreign References:
JPH09232294A1997-09-05
JP2011124362A2011-06-23
JPH11340208A1999-12-10
US20090156015A12009-06-18
JP2009088232A2009-04-23
JP2016025238A2016-02-08
JP2007027490A2007-02-01
JP2009203488A2009-09-10
JP2016111291A2016-06-20
Attorney, Agent or Firm:
TSUTSUI & ASSOCIATES (JP)
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