Title:
BIOSENSOR AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/045514
Kind Code:
A1
Abstract:
A biosensor and a preparation method therefor. The biosensor comprises: a bottom gate (110), a first dielectric layer (140); a line tunneling structure, formed by partially overlapping a first semiconductor layer (161) and a second semiconductor layer (162); a source (120) and a drain (130); a second dielectric layer (150); and a biological material receptor (170), used for being combined with a probed object to perform selective probe. The biosensor uses the line tunneling structure formed by partially overlapping the first semiconductor layer (161) and the second semiconductor layer (162), and the preparation is easy. Because a subthreshold swing is not limited by thermal distribution of carriers, a smaller subthreshold swing can be implemented in an indoor temperature; and the whole overlapped region is an effective signal sensing region, thereby improving the sensitivity of the sensor. In addition, by using a bottom gate, a quiescent operating point of the sensor can be conveniently disposed, thereby achieving optimal sensitivity performance.
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Inventors:
XU WANJIE (CN)
YANG XICHAO (CN)
ZHANG CHENXIONG (CN)
YANG XICHAO (CN)
ZHANG CHENXIONG (CN)
Application Number:
PCT/CN2016/098354
Publication Date:
March 15, 2018
Filing Date:
September 07, 2016
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
G01N27/414
Foreign References:
| CN104345082A | 2015-02-11 | |||
| US20070295988A1 | 2007-12-27 | |||
| US20140138673A1 | 2014-05-22 |
Other References:
NAM, H. ET AL.: "Multiple MoS2 transistors for sensing molecule interaction kinetics", SCIENTIFIC REPORTS, vol. 5, no. 1, 27 May 2015 (2015-05-27), pages 1 - 13, XP055497398
SARKAR, D. ET AL.: "A subthermionic tunnel field-effect transistor with an atomically thin channel", NATURE, vol. 526, no. 7571, 1 October 2015 (2015-10-01), pages 91 - 95, XP055454184
SARKAR, D. ET AL.: "A subthermionic tunnel field-effect transistor with an atomically thin channel", NATURE, vol. 526, no. 7571, 1 October 2015 (2015-10-01), pages 91 - 95, XP055454184
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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