Title:
CAPACITOR AND METHOD FOR PRODUCING CAPACITOR
Document Type and Number:
WIPO Patent Application WO/2023/127962
Kind Code:
A1
Abstract:
The present invention provides a parallel plate capacitor which can be produced by a process that is easier than an ALD method without exposing a substrate to high temperatures. A capacitor (1) according to the present invention is provided with: a substrate (11); and a first electrode layer (a metal layer 12m), dielectric layers (12d, 131d, 132d) and a second electrode layer (an electrode layer 14), which are sequentially superposed on one main surface (111) of the substrate (11). The dielectric layers (12d, 131d, 132d) are composed of a plurality of stacked metal oxide layers (three dielectric layers 12d, 131d, 132d); and each of the metal oxide layers (12d, 131d, 132d) has a region, in which oxidation is insufficient, in the vicinity of the substrate (11)-side interface.
Inventors:
ZOTOVA IULIIA (JP)
ASTAFIEV OLEG (JP)
TSAI JAW-SHEN (JP)
ASTAFIEV OLEG (JP)
TSAI JAW-SHEN (JP)
Application Number:
PCT/JP2022/048656
Publication Date:
July 06, 2023
Filing Date:
December 28, 2022
Export Citation:
Assignee:
RIKEN (JP)
International Classes:
H01G4/30; H01G4/33
Foreign References:
| JPS4877361A | 1973-10-17 | |||
| US20200266234A1 | 2020-08-20 | |||
| US20200358430A1 | 2020-11-12 | |||
| CN111641397A | 2020-09-08 | |||
| JPS49130350U | 1974-11-08 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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