Title:
CERAMIC THIN FILM ON VARIOUS SUBSTRATES, AND PROCESS FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO2003100123
Kind Code:
B1
Abstract:
The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors (19) in inert or active atmosphere (60). PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates (6). The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 1014- 1017cm-3. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si-C bonds redistribution in organo-polysilanes in the temperature range of about 200 - 450 DEG C.
Inventors:
SCARLETE MIHAI (CA)
AKTIK CETIN (CA)
AKTIK CETIN (CA)
Application Number:
PCT/CA2003/000763
Publication Date:
February 19, 2004
Filing Date:
May 23, 2003
Export Citation:
Assignee:
UNIV SHERBROOKE (CA)
BISHOP S UNIVERSITY (CA)
SCARLETE MIHAI (CA)
AKTIK CETIN (CA)
BISHOP S UNIVERSITY (CA)
SCARLETE MIHAI (CA)
AKTIK CETIN (CA)
International Classes:
C23C16/32; C23C16/46; (IPC1-7): C23C16/32; C23C16/34; C23C16/448
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