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Patent Searching and Data


Title:
CHARGE PUMP CIRCUIT AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/136821
Kind Code:
A1
Abstract:
First and second transistors (PMOS5, PMOS6) are connected in series between an input terminal (5) and an output terminal (10). A third transistor (PMOS13) is connected between the back gate and the source of the second transistor (PMOS6). The polarity of a parasitic diode (D23) of the third transistor (PMOS13) which is turned off in an operation stop state of the charge pump circuit is inverse to the polarity of a parasitic diode (D10) of the second transistor (PMOS6). In the operation stop state of the charge pump pipe, a switch drive circuit (21) outputs an input voltage (VIN) to the gate of the third transistor (PMOS13), and a discharge element (7) is turned on to discharge the output terminal (10).

Inventors:
KAMIMURAI AKIO (JP)
OE KOJI (JP)
Application Number:
PCT/JP2018/048203
Publication Date:
July 02, 2020
Filing Date:
December 27, 2018
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H02M3/07
Foreign References:
JP2007236079A2007-09-13
JP2009117426A2009-05-28
JP2009183111A2009-08-13
JP2006067764A2006-03-09
JP2003033006A2003-01-31
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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