Title:
CRYSTAL GROWTH APPARATUS, METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND SILICON CARBIDE EPITAXIAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/117251
Kind Code:
A1
Abstract:
A crystal growth apparatus (50) is provided with: a chamber (20) which comprises a gas feed port (21), a gas discharge port (22), a welded part and a water cooling unit that is configured so as to be capable of water cooling a portion that includes at least the welded part; an exhaust pump (30) which is connected to the gas discharge port (22); and a dew-point meter (40) which is arranged between the gas discharge port (22) and the exhaust pump (30), and which is configured so as to be capable of measuring the dew point of a gas that has passed through the gas discharge port (22).
Inventors:
HARADA SHIN (JP)
HORI TSUTOMU (JP)
SASAKI SHO (JP)
KISHIDA TETSUYA (JP)
HORI TSUTOMU (JP)
SASAKI SHO (JP)
KISHIDA TETSUYA (JP)
Application Number:
PCT/JP2015/085350
Publication Date:
July 28, 2016
Filing Date:
December 17, 2015
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36; C23C14/06; C23C14/24; C23C16/42; C23C16/44; C30B23/06; H01L21/205
Domestic Patent References:
| WO2011024931A1 | 2011-03-03 |
Foreign References:
| JP2000345345A | 2000-12-12 | |||
| JP2001244201A | 2001-09-07 | |||
| JP2013067523A | 2013-04-18 | |||
| JP2011195345A | 2011-10-06 | |||
| JPH11354516A | 1999-12-24 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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