CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF(AI, IN, GA, B)N ON VARIOUS SUBSTRATES

WIPO Patent Application WO2008073414

A8

A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

WO/2008/064507	TRANSFER DEVICE FOR AN OVERHEAD CONVEYING SYSTEM
WO/1988/004582	ULTRASONIC CLEANING METHOD AND APPARATUS
WO/2007/108961	THERMAL CHUCK AND PROCESSES FOR MANUFACTURING THE THERMAL CHUCK

KIM KWANG CHOONG (KR)
SCHMIDT MATHEW C (US)
WU FENG (US)
HIRAI ASAKO (US)
MCLAURIN MELVIN B (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
SPECK JAMES S (US)

PCT/US2007/025302

September 04, 2008

December 11, 2007

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UNIV CALIFORNIA (US)
KIM KWANG CHOONG (KR)
SCHMIDT MATHEW C (US)
WU FENG (US)
HIRAI ASAKO (US)
MCLAURIN MELVIN B (US)
DENBAARS STEVEN P (US)
NAKAMURA SHUJI (US)
SPECK JAMES S (US)

H01L21/00; H01L33/00

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