DEVICE AND METHOD FOR FORMING GALLIUM NITRIDE FILM, AND HYDROGENATED GALLIUM GENERATOR

WIPO Patent Application WO/2013/088916

A1

A device (100) for forming a gallium nitride film has: a hydrogenated gallium generator (20) for generating hydrogenated gallium by reacting hydrogen gas with gallium metal, and supplying the hydrogenated gallium to a substrate inside a processing chamber (1); and a nitrogen radical generator (30) which serves as a nitrogen source supply unit for supplying a nitrogen source to the substrate (S) in the processing chamber (1). Therein, the hydrogenated gallium generator (20) has: a body chamber (21) for reacting hydrogen gas with gallium metal in the interior thereof, and generating hydrogenated gallium; a gallium metal chamber (22) for housing the gallium metal in the body chamber (21); a hydrogen gas supply unit (25) for supplying hydrogen gas to the interior of the body chamber (21); a chamber heater (26) for heating the interior of the body chamber; and a discharge port (24) for discharging the hydrogenated gallium formed in the body chamber (21). Therein, the body chamber (21) is positioned in a manner such that the discharge port (24) directly connects to the interior of the processing chamber (1).

KINOSHITA HIDETOSHI (JP)
MORITA YASUSHI (JP)

PCT/JP2012/079971

June 20, 2013

November 19, 2012

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TOKYO ELECTRON LTD (JP)

C30B29/38; C30B25/14

JP2008515175A

2008-05-08

MAMORU IMADE: "Examination of Effects of H2 Concentration in Reactant Gas on GaN Growth by Gallium Hydride Vaper Phase Epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 33, 18 August 2006 (2006-08-18), pages L878 - L880

TAKAYAMA HIROSHI (JP)
Hiroshi Takayama (JP)

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