Title:
DIFFUSION AND ACTIVATION CONTROL OF IMPLANTED DOPANTS WITH ATHERMALES ANNEALING
Document Type and Number:
WIPO Patent Application WO2003085720
Kind Code:
A3
Abstract:
A method for forming a junction in a semiconductor by implanting a dopant and an ionic species in the semiconductor, and subjecting the semiconductor to athermal annealing. The athermal annealing, e.g., Electromagnetic Induction Heating (EMIH), can be performed using a microwave and/or RF frequency source. The dopant and the ionic species implantation can be performed simultaneously, the dopant implantation can precede the ionic species implantation, and the ionic species implantation can precede the dopant implantation. The implantation can occur using beam-line implantation or Plasma Doping (PLAD), and techniques such as preamorphized implantation (PAI) can optionally be used. A rapid thermal annealing (RTA) or low temperature rapid thermal annealing (LTRTA) process can also be applied to the semiconductor after implantation. The method can include controlling the oxygen content during the athermal (e.g., EMIH) annealing and/or other annealing (RTA and7or LTRTA) process.
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Inventors:
DOWNEY DANIEL
AREVALO EDWIN
AREVALO EDWIN
Application Number:
PCT/US2003/010297
Publication Date:
December 04, 2003
Filing Date:
April 01, 2003
Export Citation:
Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
International Classes:
H01L21/22; H01L21/223; H01L21/265; H01L21/268; H01L21/324; (IPC1-7): H01L21/324; H01J37/32; H01L21/225; H01L21/268
Domestic Patent References:
| WO2001071787A1 | 2001-09-27 |
Foreign References:
| US6051483A | 2000-04-18 | |||
| US20010041432A1 | 2001-11-15 | |||
| US6087247A | 2000-07-11 |
Other References:
THOMPSON K ET AL: "electromagnetic induction heating for cold wall rapid thermal processing", INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS, XX, XX, no. 7419519, 25 September 2001 (2001-09-25), pages 190 - 196, XP002248749
THOMPSON K ET AL: "ELECTROMAGNETIC ANNEALING FOR THE 100 NM TECHNOLOGY NODE", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 23, no. 3, March 2002 (2002-03-01), pages 127 - 129, XP001101706, ISSN: 0741-3106
FUKANO T ET AL: "MICROWAVE ANNEALING FOR LOW TEMPERATURE VLSI PROCESSING", INTERNATIONAL ELECTRON DEVICES MEETING. WASHINGTON, DEC. 1 - 4, 1985, WASHINGTON, IEEE, US, December 1985 (1985-12-01), pages 224 - 227, XP000842652
THOMPSON K ET AL: "ELECTROMAGNETIC ANNEALING FOR THE 100 NM TECHNOLOGY NODE", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 23, no. 3, March 2002 (2002-03-01), pages 127 - 129, XP001101706, ISSN: 0741-3106
FUKANO T ET AL: "MICROWAVE ANNEALING FOR LOW TEMPERATURE VLSI PROCESSING", INTERNATIONAL ELECTRON DEVICES MEETING. WASHINGTON, DEC. 1 - 4, 1985, WASHINGTON, IEEE, US, December 1985 (1985-12-01), pages 224 - 227, XP000842652
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