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Title:
DRY DEVELOPING METHOD AND DRY DEVELOPING DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/111454
Kind Code:
A1
Abstract:
The method of the present invention includes: (a) a step for providing a substrate on a substrate support part in a chamber, the substrate comprising a base film and a metal-containing resist on the base film, and the metal-containing resist having an exposed first region and an unexposed second region; (b) a step for forming a metal fluoride layer on the surface of the second region by supplying a first treatment gas containing a fluorine-containing gas into the chamber; and (c) a step for removing the metal fluoride layer by supplying a second treatment gas containing a chlorine-containing gas into the chamber.

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Inventors:
NAKANE YUTA (JP)
KUMAKURA SHO (JP)
Application Number:
PCT/JP2023/040723
Publication Date:
May 30, 2024
Filing Date:
November 13, 2023
Export Citation:
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Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
G03F7/36; H01L21/3065
Domestic Patent References:
WO2020264158A12020-12-30
WO2020264571A12020-12-30
Foreign References:
JP2023170393A2023-12-01
Attorney, Agent or Firm:
HASEGAWA Yoshiki et al. (JP)
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