Title:
ELECTROOPTICAL DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2001/001190
Kind Code:
A1
Abstract:
An electrooptical device characterized by comprising a ferroelectric substrate which is made of a single crystal having an electrooptical effect, and has an optical waveguide in which titanium is thermally diffused on a major surface and an axis along which the electrooptical effect is induced is parallel to the major surface, a heat-treated buffer layer provided on the major surface, an electrode provided on a part of the buffer layer, and a protective layer provided at least in an area where the electrode is not formed on the buffer layer in order to prevent the buffer layer from being contaminated.
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Inventors:
NAGATA HIROTOSHI (JP)
MIYAMA YASUYUKI (JP)
MIYAMA YASUYUKI (JP)
Application Number:
PCT/JP2000/004130
Publication Date:
January 04, 2001
Filing Date:
June 23, 2000
Export Citation:
Assignee:
SUMITOMO OSAKA CEMENT CO LTD (JP)
NAGATA HIROTOSHI (JP)
MIYAMA YASUYUKI (JP)
NAGATA HIROTOSHI (JP)
MIYAMA YASUYUKI (JP)
International Classes:
G02F1/035; (IPC1-7): G02F1/035
Foreign References:
JPH07168042A | 1995-07-04 | |||
EP0813092A1 | 1997-12-17 | |||
JPH10274758A | 1998-10-13 | |||
JPH06274954A | 1994-09-30 | |||
JPH03249626A | 1991-11-07 | |||
US5680497A | 1997-10-21 | |||
US5679291A | 1997-10-21 | |||
EP0717306A1 | 1996-06-19 | |||
EP0713123A1 | 1996-05-22 | |||
EP0444959A2 | 1991-09-04 | |||
US4917451A | 1990-04-17 |
Other References:
S.K. GHOSH ET AL.: "Preparation and characterization of reactively sputtered silicon nitride thin films", THIN SOLID FILMS, vol. 166, 1988, ROCHESTER, NY, pages 359 - 366, XP002930172
See also references of EP 1197784A4
See also references of EP 1197784A4
Attorney, Agent or Firm:
Shiga, Masatake (Takadanobaba 3-chome Shinjuku-ku Tokyo, JP)
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