Title:
EPITAXIAL STRUCTURE AND MANUFACTURING METHOD, AND LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/087638
Kind Code:
A1
Abstract:
The present application provides an epitaxial structure and a manufacturing method, which are simple in manufacturing process and low in cost. The manufacturing method comprises: depositing an N-type material layer on a first substrate, and etching the N-type material layer to form a first protrusion, at least part of the surface of the first protrusion being curved; sequentially depositing a first active layer and a first P-type layer on the first protrusion; removing the first substrate, and etching the side of the N-type material layer away from the first protrusion to form a second protrusion corresponding to the first protrusion, at least part of the surface of the second protrusion being curved; and sequentially depositing a second active layer and a second P-type layer on the second protrusion, the first protrusion and the second protrusion forming an N-type layer, the first active layer and the second active layer forming an active layer, and the first P-type layer and the second P-type layer forming a P-type layer. The present application further provides a method for manufacturing a light-emitting element by using the epitaxial structure and a light-emitting element.
Inventors:
ZHANG YANG (CN)
ZHOU RUI (CN)
CHEN CHING-CHUNG (CN)
ZHOU RUI (CN)
CHEN CHING-CHUNG (CN)
Application Number:
PCT/CN2022/092387
Publication Date:
May 25, 2023
Filing Date:
May 12, 2022
Export Citation:
Assignee:
CHONGQING KONKA PHOTOELECTRIC TECH RESEARCH INSTITUTE CO LTD (CN)
International Classes:
H01L21/302; H01L33/24
Foreign References:
| CN108899399A | 2018-11-27 | |||
| CN111540815A | 2020-08-14 | |||
| CN1864266A | 2006-11-15 | |||
| CN101218688A | 2008-07-09 | |||
| CN111540819A | 2020-08-14 | |||
| CN104733584A | 2015-06-24 | |||
| US4152712A | 1979-05-01 |
Attorney, Agent or Firm:
SCIHEAD IP LAW FIRM (CN)
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