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Title:
EPITAXIAL WAFER AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2003/019647
Kind Code:
A1
Abstract:
An epitaxial wafer comprising a silicon epitaxial layer formed on the surface of a nitrogen−doped silicon single−crystal wafer, characterized in that the oxygen deposit density of a size having a gettering power in a bulk is at least 108 pieces&sol cm3. A production method for an epitaxial wafer characterized by comprising the steps of pulling up a nitrogen−added silicon single crystal by a Czochralski method, fabricating the silicon single crystal into a wafer to produce a silicon single−crystal wafer, heat treating the silicon single−crystal wafer until the oxygen deposit density of a size having a gettering power in a wafer bulk reaches at least 108 pieces&sol cm3, and then subjecting the silicon single−crystal wafer to epitaxial growing, thereby positively providing a silicon single−crystal wafer having a high gettering power without depending on a device process.

Inventors:
TOBE SATOSHI (JP)
Application Number:
PCT/JP2002/008437
Publication Date:
March 06, 2003
Filing Date:
August 21, 2002
Export Citation:
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Assignee:
SHINETSU HANDOTAI KK (JP)
TOBE SATOSHI (JP)
International Classes:
H01L21/322; (IPC1-7): H01L21/322
Foreign References:
EP0942078A11999-09-15
EP1035236A12000-09-13
JP2002076006A2002-03-15
JP2000109396A2000-04-18
Other References:
DORNBERGER E. ET AL.: "Silicon crystals for future requirements of 300mm wafers", JOURNAL OF CRYSTAL GROWTH, vol. 229, no. 1-4, July 2001 (2001-07-01), pages 11 - 16, XP004251021
See also references of EP 1420440A4
Attorney, Agent or Firm:
Yoshimiya, Mikio (Motoasakusa 2-chome Taito-ku, Tokyo, JP)
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