EPITAXIALLY GROWING EQUIPMENT - NIKKO MATERIALS CO LTD

Title:

EPITAXIALLY GROWING EQUIPMENT

Document Type and Number:

WIPO Patent Application WO/2005/081298

Kind Code:

A1

Abstract:

Epitaxially growing equipment for epitaxially growing a thin film having excellent uniformity over the entire wafer surface. The epitaxially growing equipment is provided with at least a reactor which can be sealed airtight, a wafer storing means (wafer holder), which is arranged in the reactor and has a wafer placing part (pocket hole) for holding the wafer on the front side, a gas supplying means (gas introducing pipe) for supplying a material gas to the wafer, a heating means (heater) for heating the wafer, and a heat uniformizing means (susceptor), which holds the wafer storing means and uniformizes heat from the heating means. In the reactor of the epitaxially growing equipment, the growing film is formed on the wafer surface by supplying the material gas in a high-temperature status, while heating the wafer by the heating means via the heat uniformizing means and the wafer storing means. On the rear side of the wafer storing means, a part recessed in a dome-shape is formed.

Inventors:

SHIMIZU EIICHI (JP)
MAKINO NOBUHITO (JP)
KAWABE MANABU (JP)

Application Number:

PCT/JP2005/002225

Publication Date:

September 01, 2005

Filing Date:

February 15, 2005

Export Citation:

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Assignee:

NIKKO MATERIALS CO LTD (JP)
SHIMIZU EIICHI (JP)
MAKINO NOBUHITO (JP)
KAWABE MANABU (JP)

International Classes:

C23C16/458; C30B25/10; H01L21/205; (IPC1-7): H01L21/205

Foreign References:

JPH0596294A	1993-04-20
JPH07136694A	1995-05-30
JP2003116589A	2003-04-22
JP2003135089A	2003-05-13
JP2004194625A	2004-07-15
JP2005013045A	2005-01-20
JP2005066420A	2005-03-17

Other References: