Title:
ETCHING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/175279
Kind Code:
A1
Abstract:
Provided is an etching method wherein an object to be processed is etched in a processing chamber that has a first electrode and a second electrode which is arranged so as to face the first electrode and on which the object to be processed is placed. This etching method is characterized by having a step wherein: a first high-frequency power is intermittently applied to the first electrode or the second electrode; a second high-frequency power that is lower than the first high-frequency power is applied to the second electrode; a processing gas containing hydrogen bromide (HBr) and oxygen (O2) is supplied into the processing chamber; and a polysilicon film formed on the object to be processed is etched into a mask pattern of a silicon-containing oxide film by plasma that is produced from the processing gas, said mask pattern being patterned by means of a spacer double patterning method.
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Inventors:
NAKAHARA YOICHI (JP)
Application Number:
PCT/JP2014/061323
Publication Date:
October 30, 2014
Filing Date:
April 22, 2014
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
H01L21/3065; H01L21/027
Foreign References:
| JP2009099938A | 2009-05-07 | |||
| JP2010519758A | 2010-06-03 | |||
| JP2000058292A | 2000-02-25 | |||
| JP2002050611A | 2002-02-15 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (Marunouchi MY PLAZA 1-1, Marunouchi 2-chome, Chiyoda-k, Tokyo 05, JP)
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