FERROELECTRIC MEMORY DEVICE - OLYMPUS OPTICAL CO

Title:

FERROELECTRIC MEMORY DEVICE

Document Type and Number:

WIPO Patent Application WO/1995/026570

Kind Code:

A1

Abstract:

A ferroelectrique capacitor used in a memory cell section of a ferroelectric memory device comprises a polarization P1 region having a film thickness (d) and an area S1, and a polarization P2 region which is a component in the P1 direction of oblique polarization P2 having only one electrode section and an area S2. The combined hysteresis characteristics of the polarizations P1 and P2 include a twisted hysteresis characteristic. When the memory state of the twisted hysteresis characteristic is "0" and "1", nondestructive readout is possible due to a back switching phenomenon. A ferroelectric memory device of another mode of this invention comprises a ferroelectric capacitor (11) which has a multiplex hysteresis characteristic having at least three stable polarization values attributed to the twisted hysteresis characteristic and is formed by sandwiching a ferroelectric material which stores multilevel voltages resulting from the multiplex hysteresis characteristic as information between electrode materials, dielectric capacitor (12) connected in series to the capacitor (11), and voltage-current converting element (16) which reads out the multilevel information stored in the capacitor (11).

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Inventors:

NAKANO HIROSHI (JP)
OHMURA MASAYOSHI (JP)

Application Number:

PCT/JP1995/000533

Publication Date:

October 05, 1995

Filing Date:

March 23, 1995

Export Citation:

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Assignee:

OLYMPUS OPTICAL CO (JP)
SYMETRIX CORP (US)
NAKANO HIROSHI (JP)
OHMURA MASAYOSHI (JP)

International Classes:

G11C11/22; G11C11/56; H01L27/115; (IPC1-7): H01L27/10; H01L27/115

Foreign References:

JPH0582803A	1993-04-02
JPH03142973A	1991-06-18
JPH04171978A	1992-06-19
JPH05160360A	1993-06-25
JPH04314361A	1992-11-05
JPH07122661A	1995-05-12

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