Title:
FIELD EFFECT SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/174716
Kind Code:
A1
Abstract:
A field effect semiconductor device according to one embodiment of the present invention is a field effect semiconductor device having a metal S/D structure, and comprises: a semiconductor substrate; a gate electrode that is formed on the substrate with a gate insulating film interposed therebetween; a source/drain electrode that is formed in a surface portion of the semiconductor substrate so as to sandwich a channel region below the gate electrode and is formed of an alloy of a metal and a semiconductor that constitutes the semiconductor substrate; and a contact plug that is in contact with the source/drain electrode. With respect to the source/drain electrode, the interface between the semiconductor substrate and the source/drain electrode in the region right below the contact plug is at a position closer to the substrate than the interfaces between the semiconductor substrate and the source/drain electrode in the other regions.
Inventors:
IRISAWA TOSHIFUMI (JP)
TEZUKA TSUTOMU (JP)
TEZUKA TSUTOMU (JP)
Application Number:
PCT/JP2013/081938
Publication Date:
October 30, 2014
Filing Date:
November 27, 2013
Export Citation:
Assignee:
NAT INST OF ADVANCED IND SCIEN (JP)
International Classes:
H01L21/336; H01L21/28; H01L29/78
Foreign References:
| JP2005109347A | 2005-04-21 | |||
| JP2003100659A | 2003-04-04 | |||
| JP2006140290A | 2006-06-01 | |||
| JP2002043328A | 2002-02-08 | |||
| JP2013008832A | 2013-01-10 | |||
| JP2009188267A | 2009-08-20 |
Attorney, Agent or Firm:
KURATA, Masatoshi et al. (JP)
Masatoshi Kurata (JP)
Masatoshi Kurata (JP)
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