Title:
FIELD EFFECT TRANSISTOR HAVING INCREASED CARRIER MOBILITY
Document Type and Number:
WIPO Patent Application WO2005020323
Kind Code:
A3
Abstract:
According to one exemplary embodiment, a FET which is situated over a substrate (104), comprises a channel (112) situated in the substrate (104). The FET further comprises a first gate dielectric (116) situated over the channel (112), where the first gate dielectric (116) has a first coefficient of thermal expansion. The FET further comprises a first gate electrode (114) situated over the first gate dielectric (116), where the first gate electrode (114) has a second coefficient of thermal expansion, and where the second coefficient of thermal expansion is different than the first coefficient of thermal expansion so as to cause an increase in carrier mobility in the FET. The second coefficient of thermal expansion may be greater that the first coefficient of thermal expansion, for example. The increase in carrier mobility may be caused by, for example, a tensile strain created in the channel (112).
Inventors:
XIANG QI (US)
GOO JUNG-SUK (US)
GOO JUNG-SUK (US)
Application Number:
PCT/US2004/025565
Publication Date:
May 06, 2005
Filing Date:
August 05, 2004
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INC (US)
XIANG QI (US)
ANG BOON YONG (US)
GOO JUNG-SUK (US)
XIANG QI (US)
ANG BOON YONG (US)
GOO JUNG-SUK (US)
International Classes:
H01L29/02; H01L29/49; H01L29/51; H01L29/78; (IPC1-7): H01L29/78
Domestic Patent References:
| WO2004112147A1 | 2004-12-23 |
Foreign References:
| US20020093046A1 | 2002-07-18 | |||
| US6262462B1 | 2001-07-17 | |||
| US5721145A | 1998-02-24 | |||
| EP1164636A2 | 2001-12-19 |
Other References:
OTA K ET AL: "Novel locally strained channel technique for high performance 55nm CMOS", INTERNATIONAL ELECTRON DEVICES MEETING 2002. IEDM. TECHNICAL DIGEST. SAN FRANCISCO, CA, DEC. 8 - 11, 2002, NEW YORK, NY : IEEE, US, 8 December 2002 (2002-12-08), pages 27 - 30, XP010625982, ISBN: 0-7803-7462-2
"APPLYING MECHANICAL STRESS TO IMPROVE MOS SEMICONDUCTOR PERFORMANCE", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 9, 1 February 1988 (1988-02-01), pages 330 - 333, XP000104874, ISSN: 0018-8689
MOMOSE H S ET AL: "Relationship between mobility and residual-mechanical-stress as measured by Raman spectroscopy for nitrided-oxide-gate MOSFETs", IEDM 90, 9 December 1990 (1990-12-09), pages 65 - 68, XP010554693
O'CONNOR J: "Analytical predictions of thermal stress in MOSFETs", AEROSPACE APPLICATIONS CONFERENCE, 1995. PROCEEDINGS., 1995 IEEE ASPEN, CO, USA 4-11 FEB. 1995, NEW YORK, NY, USA,IEEE, US, 4 February 1995 (1995-02-04), pages 131 - 143, XP010147581, ISBN: 0-7803-2473-0
WRISTERS D ET AL: "Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO2 interface stress relaxation", RELIABILITY PHYSICS SYMPOSIUM, 1996. 34TH ANNUAL PROCEEDINGS., IEEE INTERNATIONAL DALLAS, TX, USA 30 APRIL-2 MAY 1996, NEW YORK, NY, USA,IEEE, US, 30 April 1996 (1996-04-30), pages 77 - 83, XP010157549, ISBN: 0-7803-2753-5
STEEGEN A ET AL: "Silicide-induced stress in Si: origin and consequences for MOS technologies", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 38, no. 1, 4 June 2002 (2002-06-04), pages 1 - 53, XP004354317, ISSN: 0927-796X
PATENT ABSTRACTS OF JAPAN vol. 017, no. 418 (E - 1408) 4 August 1993 (1993-08-04)
"APPLYING MECHANICAL STRESS TO IMPROVE MOS SEMICONDUCTOR PERFORMANCE", IBM TECHNICAL DISCLOSURE BULLETIN, IBM CORP. NEW YORK, US, vol. 30, no. 9, 1 February 1988 (1988-02-01), pages 330 - 333, XP000104874, ISSN: 0018-8689
MOMOSE H S ET AL: "Relationship between mobility and residual-mechanical-stress as measured by Raman spectroscopy for nitrided-oxide-gate MOSFETs", IEDM 90, 9 December 1990 (1990-12-09), pages 65 - 68, XP010554693
O'CONNOR J: "Analytical predictions of thermal stress in MOSFETs", AEROSPACE APPLICATIONS CONFERENCE, 1995. PROCEEDINGS., 1995 IEEE ASPEN, CO, USA 4-11 FEB. 1995, NEW YORK, NY, USA,IEEE, US, 4 February 1995 (1995-02-04), pages 131 - 143, XP010147581, ISBN: 0-7803-2473-0
WRISTERS D ET AL: "Ultra thin oxide reliability: effects of gate doping concentration and poly-Si/SiO2 interface stress relaxation", RELIABILITY PHYSICS SYMPOSIUM, 1996. 34TH ANNUAL PROCEEDINGS., IEEE INTERNATIONAL DALLAS, TX, USA 30 APRIL-2 MAY 1996, NEW YORK, NY, USA,IEEE, US, 30 April 1996 (1996-04-30), pages 77 - 83, XP010157549, ISBN: 0-7803-2753-5
STEEGEN A ET AL: "Silicide-induced stress in Si: origin and consequences for MOS technologies", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 38, no. 1, 4 June 2002 (2002-06-04), pages 1 - 53, XP004354317, ISSN: 0927-796X
PATENT ABSTRACTS OF JAPAN vol. 017, no. 418 (E - 1408) 4 August 1993 (1993-08-04)
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