Title:
FIELD EFFECT TRANSISTOR HAVING A LATERAL DEPLETION STRUCTURE
Document Type and Number:
WIPO Patent Application WO2003085722
Kind Code:
A3
Abstract:
A field effect transistor device and a method for making a field effect transistor device are disclosed. The field effect transistor device includes a stripe trench extending from the major surface of a semiconductor substrate (29) into the semiconductor substrate (29) to a predetermined depth. The stripe trench (35) contains a semiconductor material of the second conductivity type to form a PN junction at an interface formed with the semiconductor substrate (29).
Inventors:
MARCHANT BRUCE D
Application Number:
PCT/US2002/010008
Publication Date:
November 27, 2003
Filing Date:
March 29, 2002
Export Citation:
Assignee:
FAIRCHILD SEMICONDUCTOR (US)
International Classes:
H01L21/336; H01L29/06; H01L29/78; H01L29/10; (IPC1-7): H01L21/336
Foreign References:
| US5801417A | 1998-09-01 | |||
| US6201279B1 | 2001-03-13 | |||
| US6316806B1 | 2001-11-13 | |||
| US6281547B1 | 2001-08-28 | |||
| US6274905B1 | 2001-08-14 | |||
| US6239463B1 | 2001-05-29 |
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