Title:
FIELD-STOP INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/027357
Kind Code:
A1
Abstract:
The present disclosure relates to a field-stop insulated gate bipolar transistor and a manufacturing method therefor. The field-stop insulated gate bipolar transistor comprises a drift region, a front surface structure and a back surface structure. The back surface structure comprises: an electrode layer; a collector region located on the electrode layer and having a second conductivity type; and a field stop layer located on the collector region and having a first conductivity type, the drift region being located on the field stop layer. Notches are formed in the collector region and the field stop layer to form a notch region, the notch region has the first conductivity type, the doping concentration of the notch region is less than that of the field stop layer, and the drift region has the first conductivity type. According to the present disclosure, the withstand voltage of the device can be further increased.
Inventors:
WANG WAN (CN)
XIAO KUI (CN)
BIAN ZHENG (CN)
CHAI CHENKAI (CN)
YANG XIANGYU (CN)
XIAO KUI (CN)
BIAN ZHENG (CN)
CHAI CHENKAI (CN)
YANG XIANGYU (CN)
Application Number:
PCT/CN2023/101143
Publication Date:
February 08, 2024
Filing Date:
June 19, 2023
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB2 CO LTD (CN)
International Classes:
H01L29/739; H01L21/331
Domestic Patent References:
| WO2018010056A1 | 2018-01-18 |
Foreign References:
| CN105895682A | 2016-08-24 | |||
| CN101127365A | 2008-02-20 | |||
| CN103872110A | 2014-06-18 | |||
| JP2005057028A | 2005-03-03 | |||
| CN110676314A | 2020-01-10 | |||
| CN108122970A | 2018-06-05 | |||
| US20210159315A1 | 2021-05-27 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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