Title:
GROUP III ELEMENT NITRIDE SUBSTRATE AND PRODUCTION METHOD FOR GROUP III ELEMENT NITRIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/157387
Kind Code:
A1
Abstract:
The present invention provides a group III element nitride substrate in which the occurrence of warping is suppressed. A group III element nitride substrate according to an embodiment of the present invention has a first main surface and a second main surface which are opposite from each other, wherein on the first main surface, the crystallinity of a first part positioned in the central part is higher than the crystallinity of a second part positioned further outward than the first part. The half-width W2 of the diffraction peak of a (10-12) face in the second part as obtained by an x-ray diffraction rocking curve measurement may be wider than the half-width W1 of the diffraction peak of a (10-12) face in the first part as obtained by an x-ray diffraction rocking curve measurement.
Inventors:
IMAI KATSUHIRO (JP)
SUGIYAMA TOMOHIKO (JP)
NONAKA KENTARO (JP)
SUGIYAMA TOMOHIKO (JP)
NONAKA KENTARO (JP)
Application Number:
PCT/JP2022/040285
Publication Date:
August 24, 2023
Filing Date:
October 28, 2022
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
C30B29/38; H01L21/20
Domestic Patent References:
| WO2014068838A1 | 2014-05-08 |
Foreign References:
| JP2016204201A | 2016-12-08 |
Attorney, Agent or Firm:
MOMII Takafumi (JP)
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