Title:
GROUP III NITRIDE FIELD EFFECT TRANSISTORS
Document Type and Number:
WIPO Patent Application WO2006101598
Kind Code:
A3
Abstract:
Group III Nitride based field effect transistor (FETs) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about -8 to about -14 volts and a temperature of about 140 °C for at least about 10 hours.
Inventors:
SMITH RICHARD PETER (US)
SHEPPARD SCOTT T (US)
SAXLER ADAM WILLIAM (US)
WU YIFENG (US)
SHEPPARD SCOTT T (US)
SAXLER ADAM WILLIAM (US)
WU YIFENG (US)
Application Number:
PCT/US2006/003259
Publication Date:
December 21, 2006
Filing Date:
January 30, 2006
Export Citation:
Assignee:
CREE INC (US)
SMITH RICHARD PETER (US)
SHEPPARD SCOTT T (US)
SAXLER ADAM WILLIAM (US)
WU YIFENG (US)
SMITH RICHARD PETER (US)
SHEPPARD SCOTT T (US)
SAXLER ADAM WILLIAM (US)
WU YIFENG (US)
International Classes:
H01L29/778; H01L29/20; H01L29/207; H01L29/423
Foreign References:
| US20040124435A1 | 2004-07-01 |
Other References:
KUNII T ET AL: "A high reliability GaN HEMT with SiN passivation by cat-CVD", COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM, 2004. IEEE MONTEREY, CA, USA OCT. 24-27, 2004, PISCATAWAY, NJ, USA,IEEE, 24 October 2004 (2004-10-24), pages 197 - 200, XP010767465, ISBN: 0-7803-8616-7
HANSEN P ET AL: "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, MICROELECTRONICS AND NANOMETER STRUCTURES PROCESSING, MEASUREMENT AND PHENOMENA, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 22, no. 5, 13 October 2004 (2004-10-13), pages 2479 - 2485, XP012074652, ISSN: 1071-1023
HANSEN P ET AL: "AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY. B, MICROELECTRONICS AND NANOMETER STRUCTURES PROCESSING, MEASUREMENT AND PHENOMENA, AMERICAN INSTITUTE OF PHYSICS, NEW YORK, NY, US, vol. 22, no. 5, 13 October 2004 (2004-10-13), pages 2479 - 2485, XP012074652, ISSN: 1071-1023
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