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Title:
HAFNIUM COMPOUND-CONTAINING SOL-GEL SOLUTION, METHOD FOR PRODUCING HAFNIUM COMPOUND-CONTAINING SOL-GEL SOLUTION, AND METHOD FOR PRODUCING HAFNIA-CONTAINING FILM
Document Type and Number:
WIPO Patent Application WO/2023/037929
Kind Code:
A1
Abstract:
This hafnium compound-containing sol-gel solution contains a lower alcohol having not more than 5 carbon atoms that serves as a solvent, a hafnium compound serving as a hafnium source, and a polyalcohol having an ether group and/or an N atom in the molecule that serves as a wettability improver. Preferably, the hafnium compound-containing sol-gel solution further contains a stabilizer. It is preferred that the content of the hafnium compound is regulated to 0.05-10 mass% inclusive and the content of the polyalcohol is regulated to 0.05-20 mass% inclusive.

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Inventors:
TSUJIUCHI NAOTO (JP)
TATSUMI KOJI (JP)
Application Number:
PCT/JP2022/032581
Publication Date:
March 16, 2023
Filing Date:
August 30, 2022
Export Citation:
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Assignee:
MITSUBISHI MATERIALS CORP (JP)
International Classes:
C09D1/00; B05D3/02; B05D7/24; C09D7/40; C09D7/63
Foreign References:
JPH10287982A1998-10-27
CN111453999A2020-07-28
JP2000247642A2000-09-12
KR20180138500A2018-12-31
US20130295507A12013-11-07
JP2021146772A2021-09-27
JP2022131694A2022-09-07
JP2004267822A2004-09-30
JP2002187738A2002-07-05
Other References:
AKASHI TAKAYA, KASAJIMA MIHO, KIYONO HAJIME: "Resistance to Active Oxidation of Sol-Gel HfO 2 Coated SiC Polycrystal", ECS TRANSACTIONS, ELECTROCHEMICAL SOCIETY, US, vol. 16, no. 44, 29 August 2009 (2009-08-29), US , pages 185 - 190, XP093045761, ISSN: 1938-5862, DOI: 10.1149/1.3224755
M.-G. BLANCHIN ; B. CANUT ; Y. LAMBERT ; V. S. TEODORESCU ; A. BARăU ; M. ZAHARESCU: "Structure and dielectric properties of HfO2 films prepared by a sol–gel route", JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY, KLUWER ACADEMIC PUBLISHERS, BO, vol. 47, no. 2, 12 May 2008 (2008-05-12), Bo , pages 165 - 172, XP019610460, ISSN: 1573-4846
Attorney, Agent or Firm:
MATSUNUMA Yasushi et al. (JP)
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