HARD MATERIAL CLAD WITH DIAMOND, THROWAWAY CHIP, AND METHOD OF MAKING SAID MATERIAL AND CHIP

Title:

HARD MATERIAL CLAD WITH DIAMOND, THROWAWAY CHIP, AND METHOD OF MAKING SAID MATERIAL AND CHIP

Document Type and Number:

WIPO Patent Application WO/1992/005904

Kind Code:

A1

Abstract:

A diamond-clad hard material having high adhesion strength to a base material and a diamond-clad throwaway chip capable of cutting various kinds of light metals such as Al-Si alloy at high speed for a long period of time, wherein the diamond-clad hard material is composed of a material to be sintered which is constituted mainly of Si¿3?N¿4?, has a sintered skin at least at a part thereof, and is clad with diamond at least at said sintered skin; and the throwaway chip is commposed of a base material constituted mainly of Si¿3?N¿4? and a clad layer in thickness of 0.1 $m(k) 200 $g(m)m of diamond or/and diamond-like carbon vapor-deposited on the surface of the base material and is characterized by being clad with a layer of diamond or/and diamond-like carbon partly or entirely on the surface having a sintered skin property of the base material thereof: thereby effectively achieving the object.

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Inventors:

OMORI NAOYA (JP)
NOMURA TOSHIO (JP)

Application Number:

PCT/JP1991/001359

Publication Date:

April 16, 1992

Filing Date:

October 04, 1991

Export Citation:

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Assignee:

SUMITOMO ELECTRIC INDUSTRIES (JP)

International Classes:

B23B27/14; B23B51/00; B23B51/02; B23B51/04; C04B41/50; C04B41/85; C23C16/02; C23C16/27; (IPC1-7): B23B27/14; B23P15/28; C04B41/87

Foreign References:

JPS6059086B2	1985-12-23
JPS60122785A	1985-07-01
JPS61124573A	1986-06-12
JPH0224005A	1990-01-26

Other References: