Title:
HYBRID BONDING CONTACT STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/161859
Kind Code:
A1
Abstract:
Embodiments of through array contact structures of a 3D memory device and fabricating method thereof are disclosed. The memory device includes an alternating layer stack disposed on a first substrate. The alternating layer stack includes a first region including an alternating dielectric stack, and a second region including an alternating conductor/dielectric stack. The memory device further includes a barrier structure extending vertically through the alternating layer stack to laterally separate the first region from the second region, multiple through array contacts in the first region, each through array contact extending vertically through the alternating dielectric stack, an array interconnection layer in contact with the through array contacts, a peripheral circuit formed on a second substrate and a peripheral interconnection layer on the peripheral circuit. The array interconnection layer is bonded on the peripheral interconnection layer, such that the peripheral circuit is electrically connected with at least one through array contact.
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Inventors:
LU ZHENYU (CN)
YANG SIMON SHI-NING (CN)
PAN FENG (CN)
YANG STEVE WEIYI (CN)
CHEN JUN (CN)
WU GUANPING (CN)
SHI WENGUANG (CN)
CHENG WEIHUA (CN)
YANG SIMON SHI-NING (CN)
PAN FENG (CN)
YANG STEVE WEIYI (CN)
CHEN JUN (CN)
WU GUANPING (CN)
SHI WENGUANG (CN)
CHENG WEIHUA (CN)
Application Number:
PCT/CN2018/077908
Publication Date:
September 13, 2018
Filing Date:
March 02, 2018
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
H01L27/11524
Foreign References:
| CN106910746A | 2017-06-30 | |||
| CN105810638A | 2016-07-27 | |||
| CN106129010A | 2016-11-16 | |||
| CN106206454A | 2016-12-07 | |||
| US20160005481A1 | 2016-01-07 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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