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Title:
INDIUM OXIDE SINTERED BODY AND INDIUM OXIDE TRANSPARENT CONDUCTIVE FILM
Document Type and Number:
WIPO Patent Application WO/2011/052375
Kind Code:
A1
Abstract:
Disclosed is an indium oxide sintered body which contains niobium as an additive. The indium oxide sintered body is characterized in that: the ratio of the number of niobium atoms relative to the total number of atoms of all the metal elements contained in the sintered body is within the range of 1-4%; the relative density thereof is not less than 98%; and the bulk resistivity thereof is not more than 0.9 mΩ·cm. The indium oxide sintered body has high transmittances in short wavelength and long wavelength ranges, since the carrier concentration thereof is not too high although the resistivity thereof is low. Also disclosed is an indium oxide transparent conductive film.

Inventors:
IKISAWA MASAKATSU (JP)
TAKAMI HIDEO (JP)
Application Number:
PCT/JP2010/067926
Publication Date:
May 05, 2011
Filing Date:
October 13, 2010
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
IKISAWA MASAKATSU (JP)
TAKAMI HIDEO (JP)
International Classes:
C04B35/00; C23C14/34; H01B1/08; H01B5/14
Domestic Patent References:
WO2004105054A12004-12-02
WO2003014409A12003-02-20
Foreign References:
JPH0315107A1991-01-23
JPH02309511A1990-12-25
JP2003215309A2003-07-30
JP2005314734A2005-11-10
JP2005250191A2005-09-15
JPH02309511A1990-12-25
JPH0315107A1991-01-23
JP2002274848A2002-09-25
JP2006022373A2006-01-26
Other References:
See also references of EP 2495224A4
JOURNAL OF CRYSTAL GROWTH, vol. 310, 2008, pages 4336 - 4339
MATERIALS CHEMISTRY AND PHYSICS, vol. 112, 2008, pages 136 - 139
Attorney, Agent or Firm:
OGOSHI ISAMU (JP)
Isamu Ogoshi (JP)
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