Title:
INFRARED ABSORBER AND THERMAL INFRARED DETECTOR
Document Type and Number:
WIPO Patent Application WO/2007/086424
Kind Code:
A1
Abstract:
An infrared absorbing film (2) comprises a TiN-containing first layer (21) and an Si-based compound-containing second layer (22) and functions to convert infrared energy introduced from a second layer (22) side to heat. TiN has high infrared ray absorption in a wavelength range below 8 μm, but on the other hand, has high infrared ray reflectance in a wavelength range above 8 μm. Accordingly, stacking an Si-based compound layer having good infrared ray absorption in a long wavelength range onto a TiN layer can realize suitable infrared ray absorption in a wavelength range, which is low in absorption in the TiN layer, in the Si-based compound layer and, at the same time, can realize reflection of infrared rays, which is about to be passed through the Si-based compound layer, from the interface of the TiN layer and the Si-based compound layer to return the infrared rays to the Si-based compound layer.
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Inventors:
OJIMA FUMIKAZU (JP)
SATO JUN (JP)
KITAURA RYUSUKE (JP)
SATO JUN (JP)
KITAURA RYUSUKE (JP)
Application Number:
PCT/JP2007/051085
Publication Date:
August 02, 2007
Filing Date:
January 24, 2007
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
OJIMA FUMIKAZU (JP)
SATO JUN (JP)
KITAURA RYUSUKE (JP)
OJIMA FUMIKAZU (JP)
SATO JUN (JP)
KITAURA RYUSUKE (JP)
International Classes:
G01J1/02; B32B7/02; B32B9/00; G01J1/04; H01L27/14; H01L35/32
Foreign References:
| JP2007057427A | 2007-03-08 | |||
| JP2000321125A | 2000-11-24 |
Other References:
See also references of EP 1978339A4
None
None
Attorney, Agent or Firm:
HASEGAWA, Yoshiki et al. (Ginza First Bldg. 10-6 Ginza 1-chome, Chuo-k, Tokyo 61, JP)
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