INFRARED DETECTION ELEMENT AND METHOD FOR MANUFACTURING SAME

WIPO Patent Application WO/2010/147006

A1

Disclosed are a highly reliable infrared detection element and a method for manufacturing the element. The infrared detection element (1) is provided with a substrate (2), a PN semiconductor layer (3), an intermediate electrode (4), and terminal electrodes (5, 6). Each part of the PN semiconductor layer (3) is partitioned by means of grooves (15) such that pairs of adjacent first and second PN junction parts (9, 10) are alternately arranged and linearly extend along the main surface (A) of the substrate (2). The intermediate electrode (4) is provided on the PN semiconductor layer (3) side which is the reverse side having the substrate (2) thereon, in a state wherein the intermediate electrode is in contact with the second PN junction part (10), while having the first PN junction part (9) exposed. The terminal electrodes (5, 6) are the electrodes for outputting a potential change due to the charges generated by means of the first PN junction part (9) when infrared rays are inputted, and the terminal electrodes are provided on both the end portions (E1, E2) of the PN semiconductor layer (3) that linearly extends along the main surface (A) of the substrate (2).

MAKINO KENJI (JP)

PCT/JP2010/059518

December 23, 2010

June 04, 2010

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HAMAMATSU PHOTONICS KK (JP)
MAKINO KENJI (JP)

H01L31/10; G01J1/02

JP2007081225A	2007-03-29
JPS50134774A	1975-10-25
JP2002148111A	2002-05-22
JPS63226075A	1988-09-20
JPH05175537A	1993-07-13

HASEGAWA Yoshiki et al. (JP)
Yoshiki Hasegawa (JP)

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