Title:
INTEGRATED CIRCUIT, FABRICATION METHOD, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/217458
Kind Code:
A1
Abstract:
The present application relates to the technical field of electronics, and provides an integrated circuit that can reduce that amount of water vapor that permeates the inner part of a redistribution layer (RDL), which then ameliorates a series of problems in which the dielectric constant of the RDL is elevated, TDDB characteristics are degraded, metal wiring is oxidized, anti-electromigration capabilities are degraded, as well as delamination, etc. that occur due to water vapor permeation. The integrated circuit comprises: a silicon substrate, an RDL located on the silicon substrate, and a dielectric layer that comprises metal wiring and a first material. The RDL is provided with an isolation region that passes through the RDL, the isolation region comprises a second material, the porosity of the second material is less than that of the first material, the isolation region is internally provided with a through via, the second material surrounds at least a part of the through via, and the second material can be a dense material, which can effectively isolate water vapor within the through via, and reduce water vapor permeation.
Inventors:
HE RAN (CN)
GAO SHAN (CN)
GAO SHAN (CN)
Application Number:
PCT/CN2020/087604
Publication Date:
November 04, 2021
Filing Date:
April 28, 2020
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L21/768; H01L23/48
Foreign References:
| CN103109368A | 2013-05-15 | |||
| CN107393834A | 2017-11-24 | |||
| US20130210198A1 | 2013-08-15 | |||
| KR20140147588A | 2014-12-30 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT&TRADEMARK AGENT LTD. (CN)
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