Title:
LIGHT ENERGY CONVERSION ELEMENT AND DEVICE EQUIPPED THEREWITH
Document Type and Number:
WIPO Patent Application WO/2019/239620
Kind Code:
A1
Abstract:
The present disclosure provides a light energy conversion element in which a material that has a band gap suitable for a light energy conversion layer is used. The light energy conversion element according to the present disclosure is equipped with a light energy conversion layer that contains BaBi2S4 having a hexagonal crystal structure.
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Inventors:
KIKUCHI RYOSUKE
NAKAMURA TORU
KURABUCHI TAKAHIRO
HATO KAZUHITO
OBA FUMIYASU
KUMAGAI YU
NAKAMURA TORU
KURABUCHI TAKAHIRO
HATO KAZUHITO
OBA FUMIYASU
KUMAGAI YU
Application Number:
PCT/JP2018/048559
Publication Date:
December 19, 2019
Filing Date:
December 28, 2018
Export Citation:
Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L31/0256; C01G29/00; C25B1/04; C25B9/00
Domestic Patent References:
| WO2012102118A1 | 2012-08-02 |
Foreign References:
| CN102277621B | 2015-06-17 | |||
| JP2003238104A | 2003-08-27 |
Other References:
AURIVILLIUS B.: "The Crystal Structures of Two Forms of BaBi2S4", ACTA CHEMICA SCANDINAVICA . SERIES A. PHYSICAL AND INORGANIC CHEMISTRY, vol. 37, no. 5, 1983, pages 399 - 407, XP055664342
GENG LEI ET AL.: "Syntheses, Crystal and Electronic Structures, and Characterizations of Quaternary Antiferromagnetic Sulfides: Ba2MFeS5 (M=Sb, Bi", INORGANIC CHEMISTRY, vol. 50, 18 February 2011 (2011-02-18), pages 2378 - 2384
GENG LEI ET AL.: "Syntheses, Crystal and Electronic Structures, and Characterizations of Quaternary Antiferromagnetic Sulfides: Ba2MFeS5 (M=Sb, Bi", INORGANIC CHEMISTRY, vol. 50, 18 February 2011 (2011-02-18), pages 2378 - 2384
Attorney, Agent or Firm:
KAMATA Kenji et al. (JP)
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