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Title:
LOW-TEMPERATURE GOLD-FREE OHMIC CONTACT GAN-BASED HEMT DEVICE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/000692
Kind Code:
A1
Abstract:
Disclosed are a low-temperature gold-free ohmic contact GaN-based HEMT device and a preparation method therefor. The device comprises an AlGaN/GaN epitaxial layer, and etching regions at the two ends of the upper surface of the AlGaN/GaN epitaxial layer are respectively connected to a source electrode and a drain electrode; the AlGaN/GaN epitaxial layer comprises a substrate, a GaN buffer layer, a GaN channel layer, and an AlGaN barrier layer which are sequentially stacked from bottom to top. The on resistance (13.6 Ω·mm) of the device having a Ti/Al/Ta/W structure prepared by the present invention is reduced by 9.9% compared with the on resistance (15.1 Ω·mm) of a conventional device having a Ti/Al/W structure independently using Ti as a contact layer, and the performance of the device is improved.

Inventors:
WANG HONG (CN)
XIONG NIANHE (CN)
WANG YU (CN)
GAO SHEN (CN)
Application Number:
PCT/CN2022/081243
Publication Date:
January 26, 2023
Filing Date:
March 16, 2022
Export Citation:
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Assignee:
ZHONGSHAN INSTITUTE OF MODERN INDUSTRIAL TECHNOLOGY SOUTH CHINA UNIV OF T (CN)
UNIV SOUTH CHINA TECH (CN)
International Classes:
H01L29/417; H01L21/335; H01L29/20; H01L29/205; H01L29/45; H01L29/778
Foreign References:
CN113725287A2021-11-30
CN109712877A2019-05-03
CN103606516A2014-02-26
CN111128710A2020-05-08
CN111403479A2020-07-10
CN110581169A2019-12-17
US20190131244A12019-05-02
Attorney, Agent or Firm:
YOGO PATENT & TRADEMARK AGENCY LIMITED COMPANY (CN)
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