Title:
METHOD OF PRODUCING DEVICE QUALITY (Al)InGaP ALLOYS ON LATTICE-MISMATCHED SUBSTRATES
Document Type and Number:
WIPO Patent Application WO2000033388
Kind Code:
A9
Abstract:
A method of forming a semiconductor structure including providing a single crystal semiconductor substrate of GaP, and fabricating a graded composition buffer including a plurality of epitaxial semiconductor Inx(AlyGa1-y)1-xP alloy layers. The buffer includes a first alloy layer immediately contacting the substrate having a lattice constant that is nearly identical to that of the substrate, subsequent alloy layers having lattice constants that differ from adjacent layers by less than 1 %, and a final alloy layer having a lattice constant that is substantially different from the substrate. The growth temperature of the final alloy layer is at least 20 DEG C less than the growth temperature of the first alloy layer.
Inventors:
KIM ANDREW Y
FITZGERALD EUGENE A
FITZGERALD EUGENE A
Application Number:
PCT/US1999/028044
Publication Date:
March 29, 2001
Filing Date:
November 24, 1999
Export Citation:
Assignee:
MASSACHUSETTS INST TECHNOLOGY (US)
International Classes:
C30B23/00; C30B25/00; C30B25/02; C30B25/06; C30B28/12; C30B28/14; C30B29/40; H01L21/20; H01L21/205; H01L31/18; H01L33/00; H01L33/30; (IPC1-7): H01L33/00; H01L21/20; H01L31/18; H01S5/323
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