Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
MEMORY CELLS
Document Type and Number:
WIPO Patent Application WO/2013/022560
Kind Code:
A3
Abstract:
Some embodiments include memory cells. A memory cell may contain a switching region and an ion source region between a pair of electrodes. The switching region may be configured to reversibly retain a conductive bridge, with the memory cell being in a low resistive state when the conductive bridge is retained within the switching region and being in a high resistive state when the conductive bridge is not within the switching region. The memory cell may contain an ordered framework extending across the switching region to orient the conductive bridge within the switching region, with the framework remaining within the switching region in both the high resistive and low resistive states of the memory cell.

More Like This:
JP2004348806SEMICONDUCTOR STORAGE DEVICE AND PORTABLE ELECTRONIC EQUIPMENT HAVING THE SAME
JPH0352269ULTRAVIOLET RAY ERASABLE SEMICONDUCTOR NONVOLATILE MEMORY
JP2839819[Title of Invention] Non-volatile semiconductor storage device
Inventors:
SILLS SCOTT E (US)
Application Number:
PCT/US2012/046913
Publication Date:
April 11, 2013
Filing Date:
July 16, 2012
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
MICRON TECHNOLOGY INC (US)
SILLS SCOTT E (US)
International Classes:
H01L21/8247; H01L27/115
Foreign References:
US20060022347A12006-02-02
US20100243983A12010-09-30
US20100108975A12010-05-06
US20060060832A12006-03-23
Attorney, Agent or Firm:
MATKIN, Mark S. et al. (601 West First AvenueSuite 130, Spokane WA, US)
Download PDF:
View/Download PDF      PDF Help



 
Previous Patent: DIGITAL SAMPLING AND ZERO CROSSING OF ACOUSTIC SIGNALS OF ANIMALS

Next Patent: SYSTEM AND METHOD FOR IDENTIFYING A PATH OF A BILLBOARD AUDIENCE GROUP AND PROVIDING ADVERTISING CON...