Title:
MEMORY DEVICE USING SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2022/239196
Kind Code:
A1
Abstract:
A memory device according to the present invention is provided with a page comprising a plurality of memory cells that are arranged in a line on a substrate. The present invention carries out the following: a page writing operation that, by controlling the voltage applied to a first gate conductor layer, a second gate conductor layer, a first impurity region, and a second impurity region of each memory cell included in the page, retains, in the interior of a channel semiconductor layer, a hole group formed via an impact ionization phenomenon or a gate induced drain leakage current; and a page erasure operation for removing the hole group from the interior of the channel semiconductor layer by controlling the voltage applied to the first gate conductor layer, the second gate conductor layer, a third gate conductor layer, a fourth gate conductor layer, the first impurity region, and the second impurity region. In each memory cell, a first impurity layer is connected to a source line, a second impurity layer is connected to a bit line, one from among the first gate conductor layer and the second gate conductor layer is connected to a word line, the other is connected to a first drive control line, and the bit line is connected to a sense amplifier circuit via a switch circuit. During a page reading operation, page data of a memory cell group selected by the word line is read to the bit line, charge sharing is carried out between the bit line and the charge sharing node on the side opposite from the bit line of the switch circuit, and a read decision of a forced inversion type sense amplification circuit is accelerated.
Inventors:
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
HARADA NOZOMU (JP)
Application Number:
PCT/JP2021/018247
Publication Date:
November 17, 2022
Filing Date:
May 13, 2021
Export Citation:
Assignee:
UNISANTIS ELECT SINGAPORE PTE (SG)
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
SAKUI KOJI (JP)
HARADA NOZOMU (JP)
International Classes:
G11C16/04; G11C7/06; G11C11/401; H01L21/8242; H01L27/10; H01L27/108
Foreign References:
| JP2008218556A | 2008-09-18 | |||
| JP2006080280A | 2006-03-23 |
Attorney, Agent or Firm:
TANAKA Shinichiro et al. (JP)
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