Title:
MEMORY AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/066566
Kind Code:
A1
Abstract:
The embodiments of the present application relate to the technical field of memories. Provided are a memory and an electronic device, which are used for increasing the area utilization rate of a memory while realizing a unipolar memory. The memory comprises a first circuit structure layer, a second circuit structure layer, and a plurality of interconnection structures, wherein the first circuit structure layer comprises a first phase inverter; the second circuit structure layer comprises a second phase inverter; a plurality of transistors of the first phase inverter have the same polarity as a plurality of transistors of the second phase inverter; the plurality of transistors of the first phase inverter and the plurality of transistors of the second phase inverter are sequentially arranged in a first direction parallel to a reference plane; and the orthographic projections, on the reference plane, of the plurality of transistors of the first phase inverter overlap the orthographic projections, on the reference plane, of the plurality of transistors of the second phase inverter, and the first phase inverter and the second phase inverter are electrically connected by means of the plurality of interconnection structures. The memory is applied to the electronic device to improve the storage capability of the electronic device.
Inventors:
LI JUNKANG (CN)
ZHAN SHIJIE (CN)
WU YING (CN)
XU JEFFREY JUNHAO (CN)
ZHAN SHIJIE (CN)
WU YING (CN)
XU JEFFREY JUNHAO (CN)
Application Number:
PCT/CN2023/103507
Publication Date:
April 04, 2024
Filing Date:
June 28, 2023
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H10B10/00
Foreign References:
| CN108431954A | 2018-08-21 | |||
| CN114823678A | 2022-07-29 | |||
| CN104157303A | 2014-11-19 | |||
| CN113345900A | 2021-09-03 |
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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