Title:
METHOD FOR ETCHING HIGH ASPECT RATIO SEMICONDUCTOR FEATURES USING ORGANIC PHOT0-RESIST LAYERS
Document Type and Number:
WIPO Patent Application WO2004102276
Kind Code:
A3
Abstract:
A masking structure for patterning an underlying layer (20) formed from material to be etched comprises the superposition of a lower masking layer (11) formed from a first organic photo-resist reacting to a first given wavelength value, and an upper masking layer (13) formed from a second organic photo-resist reacting to a second given wavelength. The first wavelength value is higher than the second wavelength value. The first organic photo-resist exhibits a higher selectivity against the material to be etched than the second organic photo-resist. An anti-reflective coating layer (20) may be formed between the lower masking layer and the upper masking layer. The upper masking layer is patterned according to a desired pattern. The pattern is then transferred from the upper masking layer through the lower masking layer. Finally, the underlying layer is etched by using the lower masking layer as an etch mask.
Inventors:
DE JONGHE VERONIQUE (FR)
Application Number:
PCT/IB2004/001606
Publication Date:
January 20, 2005
Filing Date:
May 11, 2004
Export Citation:
Assignee:
KONINKL PHILIPS ELECTRONICS NV (NL)
DE JONGHE VERONIQUE (FR)
DE JONGHE VERONIQUE (FR)
International Classes:
G03F7/09; G03F7/095; (IPC1-7): G03F7/09; G03F7/09; G03F7/095
Other References:
OTOGURO A ET AL: "A new tri-layer resist process using a phenol capped siloxane-based middle-layer for ArF resist process", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 5039, March 2003 (2003-03-01), pages 838 - 846, XP002305167, ISSN: 0277-786X
HALLE S ET AL: "When is bilayer thin-film imaging suitable: comparison with single layer resists", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4346, March 2001 (2001-03-01), pages 970 - 981, XP002305168, ISSN: 0277-786X
KUNZ R R: "WET-DEVELOPED BILAYER RESISTS FOR 193-NM EXCIMER LASER LITHOGRAPHY", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 10, no. 6, 1 November 1992 (1992-11-01), pages 2554 - 2559, XP000331712, ISSN: 1071-1023
LIN Q ET AL: "High resolution 248 nm bilayer resist", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 3678, March 1999 (1999-03-01), pages 241 - 250, XP002305169, ISSN: 0277-786X
WATANABE K ET AL: "Heat-and oxygen-RIE-resistant polysiloxane resist with three-dimensional structure for high-aspect-ratio microfabrication", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4174, September 2000 (2000-09-01), pages 515 - 521, XP002305170, ISSN: 0277-786X
HALLE S ET AL: "When is bilayer thin-film imaging suitable: comparison with single layer resists", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4346, March 2001 (2001-03-01), pages 970 - 981, XP002305168, ISSN: 0277-786X
KUNZ R R: "WET-DEVELOPED BILAYER RESISTS FOR 193-NM EXCIMER LASER LITHOGRAPHY", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY: PART B, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 10, no. 6, 1 November 1992 (1992-11-01), pages 2554 - 2559, XP000331712, ISSN: 1071-1023
LIN Q ET AL: "High resolution 248 nm bilayer resist", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 3678, March 1999 (1999-03-01), pages 241 - 250, XP002305169, ISSN: 0277-786X
WATANABE K ET AL: "Heat-and oxygen-RIE-resistant polysiloxane resist with three-dimensional structure for high-aspect-ratio microfabrication", PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING SPIE-INT. SOC. OPT. ENG USA, vol. 4174, September 2000 (2000-09-01), pages 515 - 521, XP002305170, ISSN: 0277-786X
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