Title:
METHOD FOR FABRICATING ULTRA THIN SINGLE-CRYSTAL METAL OXIDE WAVE RETARDER PLATES AND A WAVEGUIDE POLARIZATION MODE CONVERTER USING THE SAME
Document Type and Number:
WIPO Patent Application WO2001075195
Kind Code:
A3
Abstract:
A method for fabricating ultra-thin single-crystal metal oxide wave retarder plates, such as a zeroth-order X-cut single-crystal LiNbO3 half-wave plate, comprises ion implanting a bulk birefringent metal oxide crystal at normal incidence through a planar major surface thereof to form a damage layer at a predetermined distance d below the planar major surface, and detaching a single-crystal wave retarder plate from the bulk crystal by either chemically etching away the damage layer or by subjecting the bulk crystal having the damage layer to a rapid temperature increase to effect thermally induced snap-off detachment of the wave retarder plate. The detached wave retarder plate has a predetermined thickness d dependent on the ion implantation energy. A half-wave plate fabricated in accordance with this method may be used in conjunction with an optical waveguide section to form a TE-TM polarization mode converter by mounting the half-wave plate in a groove in the waveguide section perpendicular to the direction of wave propagation therein, bonding the half-wave plate to the back-end facet of the waveguide section or bonding the half-wave plate to the front-end facet of the waveguide section. In each case the normal mode axes of the half-wave plate is at 45 DEG with respect to the direction of the electric field vector of the TE or TM mode of propagation in the waveguide section.
Inventors:
RADOJEVIC ANTONIJE M (US)
OSGOOD RICHARD M JR (US)
LEVY MIGUEL (US)
OSGOOD RICHARD M JR (US)
LEVY MIGUEL (US)
Application Number:
PCT/US2001/010344
Publication Date:
February 28, 2002
Filing Date:
March 30, 2001
Export Citation:
Assignee:
UNIV COLUMBIA (US)
RADOJEVIC ANTONIJE M (US)
OSGOOD RICHARD M JR (US)
LEVY MIGUEL (US)
RADOJEVIC ANTONIJE M (US)
OSGOOD RICHARD M JR (US)
LEVY MIGUEL (US)
International Classes:
C30B33/00; G02B6/126; G02B6/14; (IPC1-7): C30B33/00; C30B29/30; C30B29/32; G02B6/00; G02B6/13
Domestic Patent References:
| WO1999041779A1 | 1999-08-19 |
Foreign References:
| US3617934A | 1971-11-02 | |||
| US5587210A | 1996-12-24 |
Other References:
LEVY M ET AL: "FABRICATION OF SINGLE-CRYSTAL LITHIUM NIOBATE FILMS BY CRYSTAL ION SLICING", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 73, no. 16, 19 October 1998 (1998-10-19), pages 2293 - 2295, XP000788524, ISSN: 0003-6951
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