Title:
METHOD FOR GROWING GAN CRYSTAL
Document Type and Number:
WIPO Patent Application WO/2010/007983
Kind Code:
A1
Abstract:
Disclosed is a method for growing a GaN crystal. The method comprises the steps of preparing a substrate (10) that has one principal plane (10m) and contains a GaxAlyIn1-x-yN crystal (10a) having the principal plane (10m), and bringing a solution (7) of nitrogen (5) dissolved in a Ga melt (3) into contact with the principal plane (10m) of the substrate (10) and, in this state, growing a GaN crystal (20) on the principal plane (10m) under an atmosphere temperature of 800 to 1500°C and an atmosphere pressure of 500 to less than 2,000 atm. The method further comprises, after the step of preparing the substrate (10) and before the step of growing a GaN crystal (20), the step of etching the principal plane (10m) of the substrate (10). As a result, a GaN crystal which has a low dislocation density and is highly crystalline can be grown without adding any impurity other than the raw material to the melt and without the need to increase the size of a crystal growth apparatus.
Inventors:
UEMATSU KOJI (JP)
YOSHIDA HIROAKI (JP)
MORISHITA MASANORI (JP)
FUJIWARA SHINSUKE (JP)
YOSHIDA HIROAKI (JP)
MORISHITA MASANORI (JP)
FUJIWARA SHINSUKE (JP)
Application Number:
PCT/JP2009/062728
Publication Date:
January 21, 2010
Filing Date:
July 14, 2009
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
UEMATSU KOJI (JP)
YOSHIDA HIROAKI (JP)
MORISHITA MASANORI (JP)
FUJIWARA SHINSUKE (JP)
UEMATSU KOJI (JP)
YOSHIDA HIROAKI (JP)
MORISHITA MASANORI (JP)
FUJIWARA SHINSUKE (JP)
International Classes:
H01L21/208; C30B19/12; C30B29/38; H01L33/00
Domestic Patent References:
| WO1999034037A1 | 1999-07-08 |
Foreign References:
| JPS51151299A | 1976-12-25 | |||
| JP2005306709A | 2005-11-04 | |||
| JP2003183100A | 2003-07-03 | |||
| JPH11135831A | 1999-05-21 |
Attorney, Agent or Firm:
FUKAMI, Hisao et al. (JP)
Hisao Fukami (JP)
Hisao Fukami (JP)
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