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Title:
METHOD FOR INTRODUCING IMPURITIES
Document Type and Number:
WIPO Patent Application WO/2004/075274
Kind Code:
A1
Abstract:
A method for introducing impurities comprising a step for forming an amorphous layer on the surface of a semiconductor substrate, and a step for forming a shallow impurity introduction layer on the semiconductor substrate rendered amorphous characterized in that the step for forming the amorphous layer is a step for irradiating the surface of the semiconductor substrate with plasma, and the step for forming a shallow impurity introduction layer is a step for introducing impurities into the surface rendered amorphous.

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Inventors:
SASAKI YUICHIRO
Application Number:
PCT/JP2004/001473
Publication Date:
September 02, 2004
Filing Date:
February 12, 2004
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
SASAKI YUICHIRO
International Classes:
H01L21/223; (IPC1-7): H01L21/265; H01L21/22
Foreign References:
US5561072A1996-10-01
JPH09199719A1997-07-31
JPH05206045A1993-08-13
JPS5897863A1983-06-10
Other References:
See also references of EP 1596427A4
Attorney, Agent or Firm:
Iwahashi, Fumio c/o Matsushita Electric Industrial Co. Ltd. (1006, Oaza Kadom, Kadoma-shi Osaka, JP)
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